... in the discharge image (control image) given in FIG. ... the process controller 31 A 0 initiates the discharge of the cathode 7 b at the same time as the stop of ...

Jan 5, 2012 ... An ion implantation system and method are disclosed in which glitches in voltage are minimized by modifications to the power system of the ...

ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS. H01J37/00 Discharge tubes with ... AU2003239886A1 2003-12-19 Beam stop for use in an ion implantation system.

May 22, 2018 ... "Occlusion of the outflow graft can reduce or stop pump flow and set off a persistent low flow alarm in the system," a statement from the FDA ...

Dec 8, 2023 ... When can a woman start trying to get pregnant after stopping birth control? ... during pregnancy should be regulated. The US FDA has issued ...

... in them do not lock. This leads to a dose error, from which one Substrate ... Stopping an implantation process of the system in response to the stop ...

Immediately change the implant to stop implantation, (2) then move the wafer to an implant resumption position where the implant transition position on the ...

A plasma flood system for use in the implantation of ions in a semiconductor substrate comprising a plasma and low energy electron source for developing a ...

The drain regions of the transistors are modified to reduce the conductivity of those resistive regions by preventing high carrier concentration implants in one ...

... while the regions with the channel stop implant do not. [0012]. [0013]. In a ... A possible use for this structure is, for example, in ESD discharge structures.

The present invention facilitates semiconductor device fabrication by monitoring and correcting angular errors during ion implantation procedures via an ...

... prevent potentially catastrophic positive charging of semiconductor wafers during ion implantation. [0018]. It is another object of the present invention to ...

In contrast to electron bombardment by electron emission, ion bombardment by glow discharge does ... This sudden stop serves to jar the diamond material 38 in ...

Suppression magnets 52 in the beam stop arrangement 51 produce a magnetic ... This can cause substantial errors in control of overall dose of the implant ...

Those skilled in the art should appreciate that they can readily use the disclosed conception ... US7554159B2 2009-06-30 Electrostatic discharge protection device ...

However, even with the same implantation energy, ions don not stop ... during post implantation annealing. However, if the tilt angle is too small ...

Because ions lose energy when they collide with electrons and neutrons in the substrate, the ions stop moving at the desired depth of the substrate based on the ...

Eventually, the ions stop and are embedded in the clearance of crystal lattices of the wafer, and the dopant is thus called “implanted”. In addition, the ...

However, even with the same implantation energy, ions don not stop ... during post implantation annealing. However, if the tilt angle is too small ...

Once in atmosphere, atmospheric swapper 90 swaps the implanted workpiece from the load lock with a fresh workpiece from second carousel 80. Second carousel 80 ...